Effect of x-ray radiation on the IV characteristic of ZnO- A1 junction.

Date

10-2011

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Lou Serafin M. Lozada

Co-adviser

Joybel G. Bugna

Abstract

The effect of X-ray radiation to the electrical property of zinc oxide (ZnO) deposited on aluminum (Al) was investigated. ZnO film was deposited on Al substrate through electrophoretic deposition (EPD) at constant 250 V for 2 minutes. The process was done under room temperature. All samples were annealed in air at 310°C for one hour. Electron micrographs showed that ZnO film is porous with an average grain size of 0.40 iim ± 0.01 pm and average thickness of 41.23 pm ± 0.44 pm. Peaks found in the XRD spectra correspond to wurtzite structure of ZnO. After X-ray exposure, it was observed that X-ray irradiation has no apparent effect on the morphology and crystal structure of the ZnO layer. To measure the 1V characteristic of the ZnO-Al junction, copper wires were used as contact electrodes, one attached on the ZnO and the other on the Al substrate. The samples resulted to nonlinearly increasing (rectifying) IV curve for forward bias voltage 1-, 5-, 10-, and 15 V. Irradiation caused the current produced in each bias voltage to increase. Moreover, during irradiation, the current behaved linearly with the bias voltage. After the irradiation, the IV curve returned back to its exponential behavior however a greater turn-on voltage was already observed. The response of the ZnO-Al junction to X-ray radiation is favorable for possible radiation sensing applications.

Keywords: 81.15.Pq Electrodeposition, 78.30.Fs II-VI semiconductors, 87.53.Bn X-rays, 87.53.-j Ionizing radiation effects, 85.30.Hi, 85.30.Kk Schottky barrier diodes

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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