Surface photovoltage from etched silicon

Date

6-1998

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Terencio D. Lacuesta

Abstract

A surface photovoltage (SPV) apparatus was constructed to obtain the photoresponse of etched silicon. The entire set up was interfaced to a computer for an automated control and data recording of the experiment. The surface photovoltage from etched silicon was measured by synchronous detection using a lock-in amplifier. Several solutions were used to prepare the silicon surface. The surface photovoltage from different etched surfaces revealed that silicon is responsive to near infrared and visible light radiation. This study also showed the relative cleaness of the surfaces obtained from different etches. HCl and NaOH etched surfaces yielded large photovoltages implying surface cleaness. HF and ethanol etches result in small photovoltages implying formation of new substances on the surface. However, the acidic etches like HF and HCl produced surfaces that showed similar peak shifts but differing magnitudes of the photovoltage. In the same way, basic etches like NaOH and ethanol produced surfaces exhibiting similar peak shifts but differing photovoltage. These indicate that same species may have formed in different amount for the acid etched surfaces and basic etched surfaces. More studies need to be done to determine the chemical composition at the silicon surface for the different etches. The selection of best etchant depends on the target characteristic of the surface. Among the four etchants used, HCl could be best used to produced a clear surface.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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