Effects of thallium (TI) and lead (Pb) dopant on the grain structure of SnO-BaO-CaO- CuO system sintered at 880 C.

Date

4-2010

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Katherine M. Calamba

Abstract

Lead (Pb)-doped, Thallium (T1)-doped and dopant-free Sn6Ba4Ca2CuioO, were synthesized using solid-state reaction method. All samples were sintered at 880 °C for 12 hours at an average rate of 8.5°C/min since recent study showed that the optimum sintering temperature is around 880°C for the dopant-free Sn6Ba4Ca2Cul00„. The x-ray diffraction (XRD) result verified that the compound produced was Sn6Ba4Ca2Cu100.. The effect of the lead (Pb) and thallium (TI) dopants on the grain formation of the Sn6Ba4Ca2Cu100. was studied. The scanning electron microscopy (SEM) images of the Pb-doped compound showed overlapping and deformed planes while the Tl-doped compound revealed unmerged grains. The results proved that the Pb dopant decreases the melting point of Sn6Ba4Ca2Cul00„ while the TI dopant increases its melting point.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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