A new technique in polishing Indium Antimonide (InSb) under the influence of rotating fluid

Date

4-1996

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Demetrio A Yco, Jr.

Abstract

A new technique has been developed for polishing Indium Antimonide (InSb). The rotating fluid serves as the medium acting on the surface of the substrate. Bromine-methanol solutions serve as etchants in polishing the samples. The effect of varying the angular speed of the fluid with etching/polishing rate was investigated. Relationship of changing the concentrations of bromine in methanol solution with the etching/polishing rate was also determined. The result shows that as the angular speed of the fluid increases, the etching / polishing rate also increases. Also , it has been found out that the higher the concentration of Br-MeOH used, the faster the etching/ polishing rate. The new method has produced a more or less flat surface as tested under the stereomicroscope. The best polished sample is produced on a rotating fluid with angular speed equal to 89.1 rpm and a concentration of 1.5 % Br-MeOH. Qualitatively, the new technique is considered to be an effective method in polishing semiconductor such as InSb.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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