Determination of surface state energy position of silicon in mos structures using surface photovoltage (SPV) spectroscopy

Date

3-2004

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Marvin U. Herrera

Abstract

The Silicon in Metal-Oxide-Semiconductor (MOS) structure was scanned from 1998 nm to 400 nm emanated from the monochromator using Halogen as the light source to monitor the band bending in the Gate-Oxide-Silicon interface and determine the surface state energy positions of silicon utilizing MCSFET as substitute for Kelvin Probe using Surface Photovoltage Spectroscopy. The CPU reading was proportional to the band bending within the surface space charge region which changed with photo-induced population and depopulation of surface slates within the band gap. The sign of the slope of d(CPD)/d(hv) specified whether the conduction or the valence band was involved in the transition Two to three surface states were found in the shallow state region with energy value near the hand gap Results were comparable to the surface state energy position investigated using real silicon surface

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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