Determination of surface state energy position of silicon in mos structures using surface photovoltage (SPV) spectroscopy
Date
3-2004
Degree
Bachelor of Science in Applied Physics
College
College of Arts and Sciences (CAS)
Adviser/Committee Chair
Marvin U. Herrera
Abstract
The Silicon in Metal-Oxide-Semiconductor (MOS) structure was scanned from 1998 nm to 400 nm emanated from the monochromator using Halogen as the light source to monitor the band bending in the Gate-Oxide-Silicon interface and determine the surface state energy positions of silicon utilizing MCSFET as substitute for Kelvin Probe using Surface Photovoltage Spectroscopy. The CPU reading was proportional to the band bending within the surface space charge region which changed with photo-induced population and depopulation of surface slates within the band gap. The sign of the slope of d(CPD)/d(hv) specified whether the conduction or the valence band was involved in the transition Two to three surface states were found in the shallow state region with energy value near the hand gap Results were comparable to the surface state energy position investigated using real silicon surface
Language
English
Location
UPLB Main Library Special Collections Section (USCS)
Call Number
Thesis
Recommended Citation
Tadena, Melissa DR, "Determination of surface state energy position of silicon in mos structures using surface photovoltage (SPV) spectroscopy" (2004). Undergraduate Theses. 10587.
https://www.ukdr.uplb.edu.ph/etd-undergrad/10587
Document Type
Thesis