Transient surface photovoltage analysis of silicon in MOS structure using sub-band gap energy

Arvin D. Tan

Date

3-2007

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Marvin U. Herrera

Abstract

The surface band gap states of silicon in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) were determined by the technique of Surface Photovoltage Spectroscopy under ambient temperature and pressure. The silicon substrate was illuminated with varying photon wavelengths ranging from 1998 to 400 run to monitor the band bending in MOS structure. This was done to find surface states position by which the contact potential difference is proportional to the band bending. Illumination of the sample with varying energies reveal two surface states, one at 1.05 eV and other at 1.10 eV above valence band maximum. These states appeared to be bulk states appearing in the surface, their energy positions are comparable to the impurity binding site energy. The transient measurements in between the surface states were determined from the SPV versus time plots. This was done by illuminating the sample with single light wavelength in accordance with the surface states energy positions by which both have identical distribution of energies between them. The surface photovoltage transient measurements were used in the calculation of the surface states parameter.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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