In situ thin thickness monitoring under high vacuum environment by quartz crystal oscillators

Date

3-1991

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Demetrio A Yco, Jr.

Abstract

A thin film monitoring device was designed and constructed using quartz crystal oscillators vibrating in the thickness sheat mode. The chief goal of the research is to monitor grown epitaxial layers on a seed crystal. the thickness of which is vital. The fact that a quartz crystal vibrating in the thickness shear mode has a resonant frequency inversely proportional to its thickness. When film therefore is deposited unto the AT cut quartz crystal wafer, provided the thickness of the deposited film is very much less than the initial thickness of the crystal, then the shift or change in the resonant frequency of the quartz is directly related to the thickness of film grown since the deposited fil affects the resonant frequency of the quartz crystal wafer by virtue of its mass and not of its elastic properties ( Glang, 1970) Results showed an acceptable performance compared to theoretical considerations and to an existing thin film thickness monitor. The design was able to monitor a medium frequency change of 92 KHz equivalent to the thickness of 11.980 angstroms. beyond which spurious and random occurred. The design proved to be acceptable since it approached the readings of an existing thickness monitor. the design, however was not calibrated in the strictest terms due to material and equipment constraints.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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