Simulation of drain currents of short channel MOSFETs and of ballistic MOSFETs

Date

10-2005

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Allan L. Alinea

Abstract

Analyzing the behavior of a MOSFET requires the computation of the DC output characteristic curve for the device. In connection with this, a new simulation program intended to simulate the DC output curves of MOSFET was developed in JAVA". The first three SPICE MOSFET models were implemented in the program. The accuracy of the implementation was evaluated by contrasting simulations with that of SPICE® simulator. A good agreement was observed with the results. A model for ultra-small MOSFETs operating in the ballistic conditions derived by Natori was implemented as Level 4 in the program. The results of the implementation were also contrasted with the published results of Natori. A good agreement with the published results was observed.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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