Preparation of zinc oxide thin films by the Successive Ion Layer Adsorption and Reaction (SILAR) method and preliminary investigation of its use as a selective methane sensor

Date

4-2014

Degree

Bachelor of Science in Chemistry

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Marivic S. Lacsamana

Restrictions

Restricted: Not available to the general public. Access is available only after consultation with author/thesis adviser and only to those bound by the confidentiality agreement.

Abstract

The zinc oxide thin film was prepared using the successive ion layer adsorption and reaction (SILAR) method. This method used two chemical baths: the sodium zincate bath and a hot water bath. The appropriate annealing temperature was determined at 150°C. The determination of growth rate, thickness, SEM micrograph and resistivity of the zinc oxide thin films gave the optimized pH and concentration of the sodium zincate bath at 14.3 and 0.100 M, respectively. The hot water bath was maintained at 93 ± 2°C and the number of dipping was done 200 times. EDX analysis confirmed the presence of zinc and oxygen on the substrate. The zinc oxide thin film prepared was sensitized with palladium. The undoped and Pd-doped zinc oxide thin film was used for methane gas sensing. A decrease in resistance was observed upon initial exposure of the undoped and Pd-doped zinc oxide thin films to methane gas. Resistance response of undoped zinc oxide thin film gave a high response to other gases while Pd-doped zinc oxide thin film gave no response. Palladium could make the thin film selective to methane. Pd-doped zinc oxide thin film has a higher methane gas sensitivity value of 23.59 % compared to the 0.399 % of the undoped thin film.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

LG 993.5 2014 C42 /I23

Document Type

Thesis

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