Changes in the geometric structure and hydrogen-termination modify the electronic and optical properties of porous silicon
Issue Date
12-2020
Abstract
Here, we show that the electronic and optical properties of silicon (Si) can be controlled by varying the amount of dangling bonds and the number of Si–Si bonds in the system. By introducing pores in the bulk (in the form of Si vacancies), we can induce the appearance of gap states (states in the energy gap/forbidden region) in porous Si (pSi), as compared to pure Si. Terminating the Si atoms in the pores with hydrogen atoms (H) induces the disappearance of these induced gap states (IGS). As a result, we can continuously decrease (increase) the corresponding refractive indices of both pSi and H-terminated pSi by increasing (decreasing) the porosity.
Source or Periodical Title
Optik
Volume
224
Page
1-7
Document Type
Article
Physical Description
illustrations, graphs
Language
English
Subject
Density functional theory, Electronic properties, Hydrogen termination, Optical properties, Porous silicon
Recommended Citation
Hikita, Y., Padama, A.A.B., Rittiruam, M., David, M.Y., Seetawan, T., Kobayashi, H., Diño, W.A. (2020). Changes in the geometric structure and hydrogen-termination modify the electronic and optical properties of porous silicon. Optik - International Journal for Light and Electron Optics. 224. 165539. 10.1016/j.ijleo.2020.165539.
Identifier
https://doi.org/10.1016/j.ijleo.2020.165539
Digital Copy
yes
En – AGROVOC descriptors
DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; HYDROGEN TERMINATION; OPTICAL PROPERTIES; POROUS SILICON