Adsorption and one-dimensional growth of Al and in chains on Si(100): 2x1: A kinetic monte carlo approach

Abstract

Understanding the adsorption of adatom on the surface of an adsorbent and its interaction with defect sites should be considered in tailoring the growth of one-dimensional (1D) chains. Kinetic Monte Carlo simulation of a suitable atomistic lattice-gas model describing the adsorption and 1D submonolayer growth of Al and In on Si(100): 2 x 1 was performed to investigate the resulting nanowire morphology in the presence of various C-defect densities at various deposition temperatures. Average island density (Nav) in Al/Si (100) generally obeys the classically predicted Arrhenius behaviour as temperature increases. By contrast, In adatoms exclusively nucleate on C defect, where Nav is equivalent to defect density. In Al/Si (100) and In/Si (100), Nav showed linear and 'power law' dependence on coverage, respectively, whereas the average island size (Sav) for both systems showed linear dependence on coverage. The nanowires morphology in the Al/Si (100) system showed considerable dependence on flux variation. Because of the low-diffusion barrier of In adatom and high-detachment barrier on C defect, In/Si (100) is insensitive to flux. Morphology of In chains is dictated by the defect density: an increase in defect density caused higher island density and smaller island sizes irrespective of coverage and flux rates.

Source or Periodical Title

Adsorption Science and Technology

ISSN

2636174

Page

749-758

Document Type

Article

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