Study of band gap surface states of silicon in a MOSFET using surface photovoltage spectroscopy (SPS)

Issue Date

2-2006

Abstract

A study of band gap surface states of silicon in a MOSFET using surface photovoltage spectroscopy (SPS) is presented. The metal-oxide-semiconductor (MOS) structure inside the MOSFET was utilized in the measurements. Surface state energy positions, as well as surface state parameters that govern the charging and discharging of surface states, were determined from the surface photovoltage spectra and surface photovoltage transient plots respectively. © 2006 IOP Publishing Ltd.

Source or Periodical Title

Journal of Physics: Conference Series

ISSN

17426588

Volume

28

Issue

1

Page

70-73

Document Type

Article

Language

English

Identifier

10.1088/1742-6596/28/1/014.

Digital Copy

YES

Link to Full Text

Share

COinS