Silicon dioxide thickness measurement using reflectance spectrometer

Date

5-2003

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Marvin U. Herrera

Abstract

A study of silicon dioxide thickness measurement was done using influence spectrometer. The study correlates the thickness of SiO2 with reflectance using a 150 watts halogen lamp. A reflectance spectrometer was modified to measure the reflectance of the silicon dioxide thin film a five different angles of incidence. The thickness was calculated using the wavelength that corresponds to which destructive inference occurs. The thickness measured was consistent with the color chart for thermally grown SiO2 film observed perpendicularly under daylight fluorescent lighting. Collection and analysis of the data were done at the Physics Laboratory, IMSP, University of the Philippines at Los Baños

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Document Type

Thesis

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