Study on the parasitic resistances of a bipolar junction transistor (BJT)

Author

Josephine C. Garcia

Date

3-2003

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Marvin U. Herrera

Abstract

The parasitic resistance model was used in studying the current-voltage relationships of the bipolar junction transistor. A digital oscilloscope and a curve tracer were used to obtain collector current versus collector-emitter voltage (I_C-V_CE)curves. The values of the collector resistance, emitter and base resistance were measured from these curves.

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

Thesis

Recommended Citation

Garcia, Josephine C., "Study on the parasitic resistances of a bipolar junction transistor (BJT)" (2003). Undergraduate Theses. 10407.
https://www.ukdr.uplb.edu.ph/etd-undergrad/10407

Document Type

Thesis