Impact of C-defects on bare surface diffusion barriers of indium on Si(100)

Date

4-2014

Degree

Bachelor of Science in Applied Physics

College

College of Arts and Sciences (CAS)

Adviser/Committee Chair

Marvin A. Albao

Abstract

The influence of C-type defects on the activation barriers of diffusing In adatom on Si(100) at low temperatures is determined using kinetic Monte Carlo simulations. The lifetimes of individual In adatoms for different C-defect densities from which the activation barrier for diffusion can be measured are obtained. The lifetimes of adatom hopping in the parallel and perpendicular directions with respect to the Si dimer row are measured separately to account for the anisotropic property of the Si(100) surface. The temperature is set to 120 K, 130 K, 140 K and 150 K while the C-defect density is set from 0.001 to 0.01/site. The calculations show a slight increase in the activation barrier with increasing C-defect density for densities up to 0.01/site by approximately 0.8%. PACS: 81.15.Aa [thin film growth], 68.35.Fx [Diffusion; interface formation], 68.43.Mn [Adsorption kinetics].

Language

English

Location

UPLB Main Library Special Collections Section (USCS)

Call Number

LG 993.5 2014 P51 /M33

Document Type

Thesis

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